 
 2016 |
Michiharu Tabe, Hoang Nhat Tan, Takeshi Mizuno, Manoharan Muruganathan,
Le The Anh, Hiroshi Mizuta, Ratno Nuryadi, Daniel Moraru
"Atomistic nature in band-to-band tunneling in two-dimensional silicon
pn tunnel diodes"
Applied Physics Letters vol.8, issue9, pp093502-1～093502-5（2016.3） |
| 2015 |
Daniel Moraru, Michiharu Tabe
"Dopant-Atom Silicon Tunneling Nanodevices"
Nanoscale Silicon Devices, Chapter 8,pp.181-202, Eds: Shunri Oda and David
K. Ferry (2015.12) |
Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno,
Ryszard Jablonski, Michiharu Tabe
"Physics of strongly-coupled dopant-atoms in nanodevices"
International Journal of Technology (IJTech) vol.6, no.6,pp.1057-1064(2015.12) |
Arup Samanta, Daniel Moraru, Takesi Mizuno, Michiharu Tabe
"Electric-Field-Assisted Formation of an Interfacial Double-Donor Molecule
in Silicon Nano-Transistors"
Scientific Reports vol.5,pp17377-1～10（2015.11） |
Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Le The Anh, Manoharan Muruganathan , Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, Michiharu Tabe
"Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nanodevices"
Nanoscale Research Letters: 10:372, pp 1-10 (2015.9) |
Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takeshi Mizuno, Ryszard
Jablonski and Michiharu Tabe
"Effect of selective doping on the spatial dispersion of donor-induced
quantum dots in Si nanoscale transistors"
Applied Physics Express 8, pp 094202-1～094202-4（2015.8） |
Krzysztof Tyszka, Daniel Moraru,Arup Samanta,Takeshi Mizuno, Ryszard Jablonski
and Michiharu Tabe
"Comparative study of donor-induced quantum dots in Si nano-channels
by single-electron transport characterization and Kelvin probe force microscopy"
Journal of Applied Physics 117,pp244307-1～244307-6（2015.6） |
Daniel Moraru, Arup Samanta, Takahiro Tsutaya, Yuki Takasu, Takeshi Mizuno
and Michiharu Tabe
"Tunneling transport in quantum dots formed by coupled dopant atoms"
Advanced Materials Research, Vol.1117,pp78-81(2015.6) |
Krzysztof Tyszka, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski and
Michiharu Tabe
"Kelvin Probe Force Microscope Observation of Donors' Arrangement
in Si Transistor Channel"
Advanced Materials Research, Vol.1117,pp82-85(2015.6) |
| 2014 |
Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, and Michiharu Tabe
"Observation of Tunneling Effects in Lateral Nanowire pn Junctions"
Makara Journal of Technology, Vol18, No2, pp91-95(2014.8) |
Daniel Moraru, Arup Samanta, Le The Anh, Takeshi Mizuno, Hiroshi Mizuta, and Michiharu Tabe
"Transport spectroscopy of coupled donors in silicon nano-transistors"
Scientific Reports,Vol.4,pp06219-1-6(2014.8) |
Le The Anh, Daniel Moraru, Muruganathan Manoharan, Michiharu Tabe, and
Hiroshi Mizuta
"The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures"
Journal of Applied Physics, vol.116, issue 6, pp.063705-1-9 (2014.8) |
Daniel Moraru, Sri Purwiyanti, Roland Nowak, Takeshi Mizuno, Arief Udhiarto, Djoko Hartanto, Ryszard Jablonski, and Michiharu Tabe
"Individuality of dopants in silicon nano-pn junctions"
Materials Science,Vol.20 no.2,pp.129-131(2014.4) |
Roland Nowak, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski, and Michiharu Tabe
"Potential Profile and Photovoltaic Effect in Nanoscale Lateral pn Junction Observed by Kelvin Probe Force Microscopy"
Thin Solid Films, 557, pp.249-253 (2014.4) |
| 2013 |
Daniel Moraru and Michiharu Tabe
"Toward Quantum FinFET, Chapter 13 Single-Electron Tunneling Transistors Utilizing Individual Dopantpotentials", pp. 305-324
Eds: Weihua Han and Zhiming M. Wang
Springer |
Sri Purwiyanti, Roland Nowak, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto,
Ryszard Jablonski, and Michiharu Tabe
"Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures"
Applied Physics Letters, Vol. 103, issue 24, pp. 243102-1-4 (2013.12) |
Michiharu Tabe, Daniel Moraru, Earfan Hamid, Arup Samanta, Le The Anh, Takeshi Mizuno, and Hiroshi Mizuta
"Dopant-Atom-Based Tunnel SOI-MOSFETs"
ECS Transactions, vol. 58, pp. 89-95 |
D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M.
Tabe
“Experimental and ab initio study of donor state deepening in nanoscale
SOI-MOSFETs”
Transactions of the Materials Research Society of Japan, vol.38, no.2,
pp.261-264 |
M. Tabe, D. Moraru, and A. Udhiarto
"Single Atom Nanoelectronics, Chapter 13: Silicon-based single dopant
devices and integration with photons", pp. 305-327
Eds: Enrico Prati and Takahiro Shinada
Pan Stanford Publishing |
R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe
“Effects of
deep-level dopants on the electronic potential of thin Si pn junctions observed
by Kelvin probe force microscope”
Appl. Phys. Lett., vol.102, issue 8, pp.
083109-1-4 |
E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M.
Tabe
"Electron-tunneling operation of single-donor-atom transistors at
elevated temperatures"
Phys. Rev. B 87, pp. 085420-1-5 |
| 2012 |
A. Udhiarto, D. Moraru, S. Purwiyanti, Y. Kuzuya, T.
Mizuno, H. Mizuta, and M. Tabe
"Photon-Induced Random Telegraph Signal Due to
Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n
Junctions"
Appl. Phys. Express, Vol. 5, No. 11, pp. 112201-1-3 |
R. Nowak, M. Anwar, D. Moraru, T. Mizuno, R.
Jablonski, and M. Tabe
"Electron filling in phosphorus donors embedded in
silicon nanostructures observed by KFM technique"
J. Adv. Res. Phys., Vol.
3, No. 2, pp. 021202-1-3 |
| 2011 |
D. Moraru, E. Hamid, A. Udhiarto, T. Mizuno, and M.
Tabe
"Temperature evolution of electron transport in single-donor
transistors"
J. Adv. Res. Phys. 2, pp.011112-1-3 |
M. Tabe, D. Moraru, E. Hamid, M. Anwar, R. Nowak, Y. Kuzuya, and T. Mizuno
"Effect of Donor-level Deepening in nm-scale Si
SOI-MOSFETs"
J. Adv. Res. Phys. 2, pp.011111-1-3 |
M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T.
Mizuno, R. Jablonski, and M. Tabe
"Effect of electron injection into
phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force
microscopy"
Appl. Phys. Lett. 99, pp.213101-1-3 |
A. Udhiarto, D. Moraru, T. Mizuno, and M. Tabe
"Trapping of a photoexcited electron by a donor in nanometer-scale
phosphorus-doped silicon-on-insulator field-effect transistors"
Appl. Phys.
Lett. 99, pp.113108-1-3
(selected for Virtual Journal of Nanoscale Science
& Technology, Volume 24, Issue 13 (September 26, 2011), ELECTRONIC STRUCTURE
AND TRANSPORT) |
D. Moraru, A. Udhiarto, M. Anwar, R. Nowak, R.
Jablonski, E. Hamid, J. C. Tarido, T. Mizuno, and M. Tabe
"Atom devices
based on single dopants in silicon nanostructures"
Nanoscale Research
Letters, Vol.6, pp.479-1-9 (Nano Review) |
M. Anwar, Y. Kawai, D. Moraru, R. Nowak, R.
Jablonski, T. Mizuno, and M. Tabe
"Single-electron charging in phosphorous
donors in silicon observed by low-temperature Kelvin probe force microscope"
Jpn. J. Appl. Phys. (Special Issue on Scanning Probe Microscopy), Vol.50,
pp.08LB10-1-4 |
M. Ligowski, M. Tabe and R. Jablonski
"Kelvin
Probe Force Microscope measurement uncertainty"
Advanced Materials Research,
Vol.222, pp.114-117 |
D. Moraru, E. Hamid, J. C. Tarido, S. Miki, T.
Mizuno and M. Tabe
"Memory effects based on dopant atoms in nano-FETs"
Advanced Materials Research, Vol.222, pp.122-125 |
M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar,
Y. Kawai and T. Mizuno
"Si-based single-dopant atom devices"
Advanced
Materials Research, Vol.222, pp.205-20 |
M. Tabe, A. Udhiarto, D. Moraru and T. Mizuno
"Single-photon detection by Si single-electron FETs"
Phys. Status Solidi
A 208, pp.646-651
(selected for the cover of Phys. Status Solidi A
208) |
M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T.
Mizuno, R. Jablonski, M. Tabe
"KFM Observation of Electron Charging and
Discharging in Phosphorus-Doped SOI Channel"
Key Engineering Materials,
Vol.470, pp.33-38 |
D. Moraru, K. Yokoi, R. Nakamura, S. Miki, T. Mizuno
and M. Tabe
"Tunable Single-Electron Turnstile using Discrete Dopants in
Nanoscale SOI-FETs"
Key Engineering Materials, Vol.470, pp.27-32 |
 |
| 2010 |
E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T.
Mizuno and M. Tabe
"Single-electron transfer between two donors in nanoscale
thin silicon-on-insulator field-effect transistors"
Appl. Phys. Lett. 97,
pp.262101-1-3
(selected for Virtual Journal of Nanoscale Science &
Technology, Volume 23, Issue 1 (January 3, 2011), MISCELLANEOUS) |
K. Yokoi, D. Moraru, T. Mizuno and M.
Tabe
"Electrical control of capacitance dispersion for single-electron
turnstile operation in common-gated junction arrays"
J. Appl. Phys. 108,
pp.053710-1-5 |
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R.
Jablonski, Y. Ono and T. Mizuno
"Single-Electron Transport through Single
Dopants in a Dopant-Rich Environment"
Phys. Rev. Lett., Vol.105,
pp.016803-1-4
(selected for Virtual Journal of Nanoscale Science &
Technology, Volume 22, Issue 3 (July 19, 2010), ELECTRONIC STRUCTURE AND
TRANSPORT) |
M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura,
M. Ligowski, S. Miki and T. Mizuno
"Breakthrough of Advanced Nano-Silicon
Devices"
Indonesian Nanoletter, Vol.3, No.1, pp.17-21 |
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi,
R. Jablonski and T. Mizuno
"Observation of Discrete Dopant Potential and Its
Application to Si Single-Electron Devices"
Thin Solid Films, Vol.518,
pp.S38-S43 |
田部道晴, D. Moraru
“ナノシリコンの最新技術と応用展開”
第1章 8「シリコン多重ドットFETの新機能：フォトン検出と単電子転送」、pp.56-65
シーエムシー出版
越田信義 [監修] |
田部道晴
電子情報通信学会「知識ベース」
S2群(ナノ・量子・バイオ)－2編(ナノエレクトロニクス)－1章「シリコンナノエレクトロニクス」
オーム社、分担執筆 |
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PUBLICATIONS
2000-2009