 
 2009 |
M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T.
Mizuno, M. Tabe, R. Jablonski
"Detection of individual dopants in
single-electron devices- A study by KFM observation and simulation"
Journal
of Automation, Mobile Robotics & Intelligent Systems, Vol.3, No.4,
pp.130-133 |
D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R.
Nakamura, K. Yokoi, T. Mizuno, M. Tabe
"Single-electron transport
characteristics in quantum dot arrays due to ionized dopants"
Journal of
Automation, Mobile Robotics & Intelligent Systems, Vol.3, No.4,
pp.52-54 |
A. K. Kikombo, M. Tabe and Y. Amemiya
"A photon
position sensor consisting of single-electron circuits"
Nanotechnology,
Vol.20, pp.405209-1-7 |
D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno and M.
Tabe
"Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped
Nanowire Silicon-On-Insulator Field-Effect Transistors"
Appl. Phys. Express,
Vol.2, pp.071201-1-3 |
K. Yokoi, D. Moraru, M. Ligowski and M. Tabe
"Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots"
Jpn. J. Appl. Phys., Vol.48, pp.024503-1-7
(selected for Virtual Journal
of Nanoscale Science & Technology, Volume 19, Issue 19 (May 11, 2009),
ELECTRONIC STRUCTURE AND TRANSPORT) |
M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M.
Ligowski, R. Jablonski and T. Mizuno
"Si Single-Electron SOI-MOSFETs:
Interplay with Individual Dopants and Photons"
2009 Materials Research
Society, Vol.1145-MM10-01-1-7 |
| 2008 |
田部道晴
“シリコンフォトニクス－先端光テクノロジーの新展開－”、第4章「受光素子」、pp.119-154
オーム社
金光義彦・深津 晋 [共編] |
M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R.
Jablonski and M. Tabe
"Observation of individual dopants in a thin silicon
layer by low temperture Kelvin Prove Force Microscope"
Appl. Phys. Lett.,
Vol.93, No.14, pp.142101-1-3 |
Y. Fan, R. Nuryadi, Z. A. Burhanudin, M. Tabe
"Thermal agglomeration of ultrathin silicon-on-insulator layers: crystalline
orientation dependence"
Jpn. J. Appl. Phys., Vol.47, No.3,
pp.1461-1464 |
M. Tabe, R. Nuryadi, D.Moraru, Z. A. Burhanudin, K.
Yokoi and H. Ikeda
"Si Multidot FETs for Single-Electron Transfer and
Single-Photon Detection"
ACTA PHYSICA POLONICA A, Vol.113, No.3,
pp.811-814 |
| 2007 |
M. Ligowski, R. Nuryadi, A. Ichiraku, M.Anwar, R.
Jablonski, M. Tabe
"KFM measurements of an ultrathin SOI-FET channel
surface"
Recent Advances in Mechatronics, pp.556-560, Springer |
M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K.
Yokoi and H. Ikeda
"Manipulation of single-electrons in Si nanodevices
-Interplay with photons and ions-"
Recent Advances in Mechatronics,
pp.500-504, Springer |
D. Moraru, Y. Ono, H. Inokawa and M. Tabe
"Quantized electron transfer through random multiple tunnel junctions in
phosphorous-doped silicon nanowires"
Physical Review B, Vol.76, no.7,
pp.075332-1-5
(selected for Virtual Journal of Nanoscale Science &
Technology, Volume 16, Issue 10 (September 3, 2007), ELECTRONIC STRUCTURE AND
TRANSPORT) |
Z. A. Burhanudin, R. Nuryadi and M.
Tabe
"Detection of field-induced single- acceptor ionization in Si by
single-hole-tunneling transistor"
Appl. Phys. Lett., Vol.91, No.4,
pp.042103-1-3 |
 |
| 2006 |
M. Tabe, H. Ikeda and Y. Ishikawa
"Silicon Nanoelectronics, chapter 6 Resonant tunneling in Si nanodevices,
pp. 133-154
Eds: D. Ferry and S. Oda
CRC Press |
H. Ikeda and M. Tabe
"Numerical study of turnstile operation in random-multidot-channel field-effect transistor"
J. Appl. Phys., Vol. 99, pp.073705-1-6
(selected for Virtual Journal of Nanoscale Science & Technology, Volume
13, Issue 15 (April 17, 2006), ELECTRONIC STRUCTURE AND TRANSPORT) |
D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda and M. Tabe
"Fowler-Nordheim Current Oscillations in Si(111)/SiO2/twisted-Si(111)
Tunneling Structures"
Jpn. J. Appl. Phys., Vol.45, No.11, pp.L316-L318 |
Y. Ishikawa, C. Yamamoto and M. Tabe
"Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network" Appl. Phys. Lett., Vol.88, pp.073112-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Volume 13, Issue 9 (March 6, 2006), ELECTRONIC STRUCTURE AND TRANSPORT) |
R. Nuryadi, Y. Ishikawa and M. Tabe
"Single-photon-induced random telegraph signal in a two-dimensional
multiple-tunnel-junction array"
Phys. Rev. B, Vol. 73, pp.045310-1-7 |
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa and M. Tabe
"Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer"
Thin Solid Films, Vol.508, pp.235-238 |
| 2005 |
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe
and Y. Ono
"Thermally-induced formation of Si wire array on an ultrathin
(111) silicon-on-insulator substrate"
Appl. Phys. Lett. Vol.87, pp.121905-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Vol.
12, Issue 13 (September 26, 2005), ADVANCES IN FABRICATION AND
PROCESSING) |
M. Maeda, T. Watanabe, Y. Imai, Y. Ishikawa and M. Tabe
"Diffusion of Li in the silicon oxide films and evaluation of Li-induced
surface potential"
Appl. Surf. Sci. Vol.244, pp.61-64 |
R.Nuryadi, H. Ikeda, Y. Ishikawa and M. Tabe
"Current fluctuation in single-hole transport through a two-dimensional Si
multidot"
Appl. Phys. Lett. Vol.86, pp.133106-1-3
(selected for Virtual
Journal of Nanoscale Science & Technology, Vol. 11, Issue 13 (April 4,
2005), ELECTRONIC STRUCTURE AND TRANSPORT) |
Y. Ishikawa, K. Yamauchi, C. Yamamoto and M. Tabe,
"Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding
Artificial Dislocation Network"
Materials Research Society Symposium
Proceedings vol. 864, pp.E6.5.1-E6.5.6 |
Y. Ishikawa, H. Ikeda and M.
Tabe
"Potential-well-roughness-induced transition from resonant tunneling to
single-electron tunneling in Si/SiO2 double-barrier structure"
Appl. Phys.
Lett., Vol.86, pp.013508-1-3
(selected for Virtual Journal of Nanoscale
Science & Technology, Vol. 11, Issue 2 (January 17, 2005), ELECTRONIC
STRUCTURE AND TRANSPORT) |
|
| 2004 |
田部道晴
日本表面科学会編
新訂版 表面科学の基礎と応用 7.1 直接接合 |
H. Ikeda, R. Nuryadi, Y. Ishikawa and M. Tabe
"Photoinduced effects on single-charge tunneling in a Si two-dimensional
multi-dot FET"
Jpn. J. Appl. Phys., Vol.43 (2004) No.6B pp.L759 - L76 |
| 2003 |
R. Nuryadi, H. Ikeda, Y. Ishikawa and M. Tabe
"Ambipolar Coulomb blockade characteristics in a two-dimensional
Si multi-dot device"
IEEE Trans. Nanotechnology, Vol.2, pp.231-235 |
S. Yamamura, S. Yamauchi, S. Watanabe, M. Tabe, T. Kasai, Y. Nonogaki, T. Urisu
"Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared
Reflection Absorption Spectroscopy by Wafer-Bonding"
Jpn. J. Appl. Phys., Vol.42, pp. 3942-3945 |
Y. Ishikawa, Y. Imai, H. Ikeda and M. Tabe
"Pattern-induced alignment of silicon islands on buried oxide layer
of silicon-on- insulator structure"
Appl. Phys. Lett., Vol.83, pp. 3162-3164 |
H. Ikeda, M. Iwasaki, Y. Ishikawa and M. Tabe
"Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage"
Appl. Phys. Lett., Vol.83, pp. 1456-1458
(selected for Virtual Journal of Nanoscale Science & Technology, Vol.
8, Issue 8 (August 25, 2003), ELECTRONIC STRUCTURE AND TRANSPORT) |
| 2002 |
|
田部道晴
応用物理学会編
応用物理ハンドブック
9.2ダイオード pp.576-583
|
田部道晴、澤田和明、ラトノ・ヌルヤディ、杉木幹生、石川靖彦、石田誠
「シリコンナノ構造からの電子の電界放出（解説論文）」
電子情報通信学会和文論文誌Ｃ Vol.J85-C, pp. 803-809 |
K.Sawada, M.Tabe, Y.Ishikawa and M.Ishida:
"Field Electron Emission Device Using Silicon Nano-Protrusions"
J. Vac. Sci. Technol. B, Vol.20, pp.787-790 |
Y. Ishikawa, M. Kumezawa, Ratno Nuryadi and M.Tabe
"Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator
layer"
Appl. Surf. Sci., Vol.190, pp.11-15 |
田部道晴、石川靖彦、水野武志
「極薄SOIを用いたシリコンナノ構造デバイス」
応用物理 Vol.71, No.2, pp. 209-213 |
R. Nuryadi, Y. Ishikawa, Y. Ono and M. Tabe
"Thermal agglomeration of single-crystalline Si Layer on buried SiO2 in ultrahigh vacuum"
J. Vac. Sci. Technol. B, Vol.20, pp.167-172 |
| 2001 |
Y. Ishikawa, T. Ishihara, M. Iwasaki and M.Tabe
"Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure"
Electronics Letters, Vol.37, pp.1200-1201 |
K. Sawada, M. Tabe, M. Iwatsuki, Y. Ishikawa and M. Ishida
"Field Electron Emission from Si Nanoprotrusions"
Jpn. J. Appl. Phys., Vol.40 No.8A pp.L832-L834 |
田部道晴、川崎隆弘、上村崇史、石川靖彦、水野武志
「シリコンナノ構造のKFMによる電位測定」
表面科学 研究紹介 Vol.22, No.5, pp.301-308 |
M. Tabe, M. Kumezawa, Y. Ishikawa and T. Mizuno
"Quantum confinement effect in Si quantum well and dot structures
fabricated from ultrathin silicon-on-Insulator wafers"
Appl. Surf. Sci., Vol.175/176, pp.614-619 |
Y. Ishikawa, M. Kosugi and M. Tabe
"Effect of nanometer-scale corrugation on densities of gap states
and fixed charges at the thermally-grown SiO2/Si Interface"
J. Appl. Phys., Vol.89, No.2, pp.1256-1261
(selected for Virtual Journal of Nanoscale Science & Technology, Vol.
3, Issue 2 (January 8, 2001), SURFACE AND INTERFACE PROPERTIES) |
Y. Ishikawa, M. Kosugi, T. Tsuchiya, and M. Tabe
"Concentration of Electric Field near Si Dot/Thermally-Grown SiO2
Interface"
Jpn. J. Appl. Phys., Vol.40, pp.1866-1869 |
M. Tabe, M. Kumezawa and Y. Ishikawa
"Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator
Substrate"
Jpn. J. Appl. Phys., Vol.40 No.2B pp.L131-L133 |
| 2000 |
R. Nuryadi, Y. Ishikawa and M. Tabe
"Formation and ordering of self-assembled Si islands by ultrahigh
vacuum annealing of ultrathin bonded silicon- on-insulator structure"
Appl. Surf. Sci., Vol.159-160, pp.121-126 |
Y. Ishikawa, M. Kosugi, M. Kumezawa, T. Tsuchiya, M. Tabe
"Capacitance-voltage study of single-crystalline Si dots on ultrathin
buried SiO2 formed by nanometer- scale local oxidation"
Thin Solid Films, Vol.369, pp.69-72 |
|
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2010-