 1999 |
M. Tabe and T. Yamamoto
"Reply to "Comment on 'Initial stages of nitridation of Si (111)
surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy
studies' by M. Tabe and T. Yamamoto""
Surf. Sci. Vol.431, p.281 |
Y. Ishikawa, Shigenori Makita, Jianhua Zhang, Toshiaki Tsuchiya and M.Tabe
"Capacitance-voltage study of silicon-on-insulator structure with
an ultrathin buried SiO2 layer fabricated by wafer bonding"
Jpn. J. Appl. Phys. Vol.38, pp.L789-L791 |
M. Tabe, M. Kumezawa, T. Yamamoto, S. Makita, T. Yamaguchi and Y. Ishikawa
"Formation of high-density silicon dots on a silicon-on-insulator
substrate"
Appl. Surf. Sci. Vol.142, pp.553-557 |
M. Tabe, Y. Terao, R. Nuryadi, Y. Ishikawa, N. Asahi and Y. Amemiya
"Simulation of Visible Light Induced Effects in a Tunnel Junction
Array for Photonic Device Applications"
Jpn. J. Appl. Phys. Vol.38, pp.593-596 |
| 1998 |
T. Yamaguchi, M. Nasu, Z-T Jiang, M. Tabe and Y. Kanda
"Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers"
Thin Solid Films, vol. 313-314, pp. 264-269 |
M. Tabe, T. Yamamoto, T. Nagasawa and K. Murakami
"Si Pillar Formation and Height Control by Furnace Oxidation of the
Si (111) Surface with Ultra-Small SiN Nuclei"
Jpn. J. Appl. Phys. Vol.37 Part 1, No 3B, pp.1576-1579 |
M. Tabe, Y. Terao, N. Asahi and Y. Amemiya
"Photoirradiation Effects in a Single-Electron Tunnel Junction Array"
IEICE Trans. Electron., Vol. E81-C, No.1, pp.36-41 |
| 1997 |
M. Tabe, N. Asahi, Y. Amemiya and Y. Terao
"Simulations of Relaxation Process for Non-Equilibrium Electron Distributions
in Two-Dimensional Tunnel Junction Arrays"
Jpn. J. Appl. Phys. Vol.36, Part 1, No. 6B, pp.4176-4180 |
M. Tabe, T. Yamamoto and Y. Terao
"Nitridation and subsequent oxidation process of Si (111) and (100)
surfaces for high density Si pillar formation"
Appl. Surf. Sci. 117/118, pp.131-135 |
T. Yamaguchi, A. H. Jayatissa, M. Aoyama and M. Tabe
"Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry"
Appl. Surf. Sci. 113/114, pp.493-498 |
M. Tabe and T. Yamamoto
"Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron
spectroscopy and scanning tunneling microscopy studies"
Surf. Sci. 376, pp.99-112 |
田部道晴、小田俊理、平本俊郎、中里和郎、雨宮好仁
「単電子デバイス・回路の研究状況と今後の展望」
応用物理 66, 第2号, pp.99-108 |
 |
| 1996 |
Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase and M. Tabe
"Electron tunneling from the edge of thin single-crystal Si layers
through SiO2 film"
J. Appl. Phys. 80, No.8, pp.4450-4457 |
田部道晴、山本武司
「Si清浄表面のN2ガスによる熱窒化」
表面科学 Vol.17, pp.19-24 |
H. Kageshima and M. Tabe
"Theoretical Calculation of Core Level Shifts for O/Si (111) Surfaces"
Surf. Sci. Vol.351, pp.53-63 |
M. Tabe and T. Yamamoto
"Nanometer-scale local oxidation of silicon using silicon nitride
islands formed in the early stages of nitridation"
Appl. Phys. Lett. Vol.69, No.15, pp. 2222-2224 |
| 1995 |
S.Horiguchi, Y.Nakajima, Y.Takahashi and M.Tabe
"Energy Eigenvalues and Quantized Conductance Values of Electrons
in Si Quantum Wires on the {100} Plane"
Jpn. J. Appl. Phys. 34, pp.5489-5498 |
Y.Ono, M.Nagase, M.Tabe and Y.Takahashi
"Thermal Agglomeration of Thin Single Crystal Si on SiO2 in Vacuum"
Jpn. J. Appl. Phys. 34, pp.1728-1735 |
Y.Takahashi, T.Furuta, T.Ishiyama and M.Tabe
"Photoluminescence from Silicon Quantum Well Formed on SIMOX Substrate"
Jpn. J. Appl. Phys. 34, pp.950-954 |
Y.Nakajima, Y.Takahashi, S.Horiguchi, K.Iwadate, H.Namatsu, K.Kurihara
and M.Tabe
" Quantized Conductance of a Silicon Wire Fabricated Using SIMOX Technology"
Jpn. J. Appl. Phys. 34, pp.1309-1314 |
A.Fujiwara, Y.Takahashi, K.Murase and M.Tabe
"Time-resolved measurement of single-electron tunneling in a Si single-electron
transistor with satellite Si islands"
Appl. Phys. Lett. 67, No.20, pp.2957-2959 |
M.Tabe
"Thermal Nitridation of Si (111) Surfaces with N2 Molecules Studied by X-Ray Photoelectron Spectroscopy"
Jpn. J. Appl. Phys.Vol.34, Part2, No.10B,pp.L1375-L1378 |
Y.Takahashi, N.Nagase, H.Namatsu, K.Kurihara, K.Iwadate, Y.Nakajima, S.Horiguchi,
K.Murase and M.Tabe
" Fabrication technique for Si single-electron transistor operating
at room temperature"
Electron. Lett. 31, No.2, pp.136-137 |
| 1994 |
H.Kageshima, Y.Ono, M.Tabe, and T.Ohno
"Origin of Dark Regions in Scanning Tunneling Microscopy Images Formed by Thermal Oxidation of Si(111) Surface"
Jpn. J. Appl. Phys. 33, Part 1, No.7A, pp.4070-4074 |
H.Kageshima and M.Tabe
"First-Principle Calculation of Core Level Energy Shifts on the Initial
Oxidation Stage of Si(111) Surface"
Control of Semiconductor Interfaces, Elsevier Science B.V. pp.227-232 |
Y.Takahashi, T.Ishiyama, and M.Tabe
"Counter-oxidation of superficial Si in single-crystalline Si on SiO2
structure"
Appl. Phys. Lett. 65, No.23, pp.2987-2989 |
Y.Nakajima, Y.Takahashi, S.Horiguchi, K.Iwadate, H.Namatsu, K.Kurihara,
and M.Tabe
"Fabrication of a silicon wire surrounded by silicon dioxide and its transport properties"
Appl. Phys. Lett. 65, No.22, pp.2833-2835 |
| 1993 |
電子情報通信学会編
先端デバイス材料ハンドブック 第2編
2.2.4節「エピタキシャル成長」pp.234-238
2.2.10節「シリコン系ヘテロ材料」pp.257-261 分担執筆
オーム社 |
Y.Ono, M.Tabe and H. Kageshima
"Scanning-Tunneling-Microscopy Observation of Thermal Oxide Growth
on Si(111)7x7 Surfaces"
Phys.Rev.B vol.48, No.19, pp.14291-14300 |
T.Karasawa, Y.Kunii and M.Tabe
"Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates
by Si-GeH4-B2H6 Molecular Beam Epitaxy"
J.J.A.P. vol.32, Part1, No.3A, pp.1039-1044 |
Y.Omura, S.Horiguchi, M.Tabe and K.Kishi
"Quantum-Mechanical Effects on the Threshold Voltage of Ultrathin-SOI nMOSFET's"
IEEE EDL vol.14, No.12, pp.569-571 |
Y.Ono, M.Tabe and Y.Sakakibara
"Segregation and Defect Termination of Fluorine at SiO2/Si Interfaces"
Appl.Phys.Lett. vol.62, No.4, pp.375-377 |
| 1992 |
田部道晴
精密工学会編
新版 精密工作便覧 第III編4.6.1節 分担執筆
コロナ社 |
| 1991 |
|
田部道晴
古川静二郎・雨宮好仁 編
シリコン系ヘテロデバイス 第7章、第10章 分担執筆
丸善
|
M.Tabe and M.Tanimoto
"Tunneling Spectroscopy of Ultrathin Oxide on Si Structure and H-Terminated
Si Surfaces"
Appl.Phys.Lett. vol.58, No.19, pp.2105-2107 |
H.Yamada and M.Tabe
"Ultra-Dry Annealing after Polysilicon Electrode Formation for Improving the TDDB Lifetime of Ultra-Thin Silicon Oxide Films in MOS Diodes"
IEEE EDL vol.12, No.10, pp.536-538 |
| 1990 |
|
田部道晴
酒井 徹志・小切間 正彦監修
超LSIの製造技術 第4巻 分担執筆
日刊工業新聞社
|
M.Tabe, M.Takahashi, T.Ichimori and Y.Sakakibara
"Oxygen-Doped and Nitrogen-Doped Silicon Films Prepared by Molecular Beam Epitaxy"
Thin Solid Films vol.184, pp.373-377 |
|
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