 1989 |
T.Ichimori, M.Tabe and Y.Sakakibara
"Preparation and Characterization of SiNx Films Epitaxially Grown
on Si(111) Substrates"
J.Crystal Growth vol.95, pp.464-467 |
| 1987 |
Y.Kunii, M.Tabe and Y.Sakakibara
"Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films"
J.J.A.P. vol.26, No.7, pp.1008-1013 |
M.Tabe, M.Takahashi and Y.Sakakibara
"Oxygen-Doped Si Epitaxial Film (OXSEF)"
J.J.A.P. vol.26, No.11, pp.1830-1837 |
M.Takahashi, M.Tabe and Y.Sakakibara
"I-V Characteristics of Oxygen-Doped Si Epitaxial Film (OXSEF)/Si
Heterojunctions"
IEEE EDL vol.EDL-8, No.10, pp.475-476 |
| 1986 |
M.Tabe, T.T.Chiang, I.Lindau and W.E.Spicer
"Initial Stage of Thermal Oxidation of the Si(111)-(7x7) Surface"
Phys.Rev.B vol.34, No.4, pp.2706-2717 |
| 1985 |
J.Takahashi and M.Tabe
"UV Irradiation Effects on Chemical Vapor Deposition of SiO2"
J.J.A.P. vol.24, No.3, pp.274-278 |
M.Tabe
"Production Silicon Molecular Beam Epitaxy Apparatus for 4-in.-Diam
Wafers"
J.Vac.Sci.Technol. B3, No.4, pp.975-980 |
| 1984 |
Y.Kunii, M.Tabe and K.Kajiyama
"Amorphous-Si/Crystalline-Si Facet Formation during Si Solid-Phase Epitaxy near Si/SiO2 Boundary"
J.Appl.Phys. vol.56, No.2, pp.279-285 |
M.Tabe
"UV Ozone Cleaning of Silicon Substrates in Silicon Molecular Beam
Epitaxy"
Appl.Phys.Lett. vol.45, No.10, pp.1073-1075 |
| 1983 |
Y.Kunii, M.Tabe and K.Kajiyama
"Solid-Phase Lateral Epitaxy of Chemical-Vapor-Deposited Amorphous
Silicon by Furnace Annealing"
J.Appl.Phys. vol.54, No.5, pp.2847-2849 |
M.Tabe and K.Kajiyama
"Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy"
J.J.A.P. vol.22, No.3, pp.423-428 |
| 1982 |
Y.Kunii, M.Tabe and K.Kajiyama
"Solid-Phase Epitaxy of CVD Amorphous Film on Crystalline Si"
J.J.A.P. vol.21, No.10, pp.1431-1436 |
M.Tabe
"Etching of SiO2 Films by Si in Ultra-High Vacuum"
J.J.A.P. vol.21, No.3, pp.534-538 |
S.Konaka, M.Tabe and T.Sakai
"A New Silicon-on-Insulator Structure Using A Silicon Molecular Beam
Epitaxial Growth on Porous Si"
Appl.Phys.Lett. vol.41, No.1, pp.86-88 |
| 1981 |
M.Tabe, K.Arai and H.Nakamura
"Effect of Growth Temperature on Si MBE Film"
J.J.A.P. vol.20, No.4, pp.703-708 |
| 1980 |
M.Tabe, K.Arai and H.Nakamura
"Persistence of Si(111)7x7 Surface Structure under Air Exposure"
Surf.Sci. vol.99, No.3, pp.L403-L409 |
| 1979 |
M.Tabe and H.Nakamura
"Segregation and Desorption Kinetics for Evaporation of Arsenic from
Silicon"
J.Appl.Phys. vol.50, No.8, pp.5292-5295 |
M.Tabe and H.Nakamura
"Adsorbed Layer Model for Autodoping Mechanism in Silicon Epitaxial Growth"
J.Electrochem.Soc. vol.126, No.5, pp.822-826 |
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