2009
M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, R. Jablonski
"Detection of individual dopants in single-electron devices- A study by KFM observation and simulation"
Journal of Automation, Mobile Robotics & Intelligent Systems, Vol.3, No.4, pp.130-133
D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, M. Tabe
"Single-electron transport characteristics in quantum dot arrays due to ionized dopants"
Journal of Automation, Mobile Robotics & Intelligent Systems, Vol.3, No.4, pp.52-54
A. K. Kikombo, M. Tabe and Y. Amemiya
"A photon position sensor consisting of single-electron circuits"
Nanotechnology, Vol.20, pp.405209-1-7
D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno and M. Tabe
"Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-On-Insulator Field-Effect Transistors"
Appl. Phys. Express, Vol.2, pp.071201-1-3
K. Yokoi, D. Moraru, M. Ligowski and M. Tabe
"Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots"
Jpn. J. Appl. Phys., Vol.48, pp.024503-1-7 (selected for Virtual Journal of Nanoscale Science & Technology, Volume 19, Issue 19 (May 11, 2009),
ELECTRONIC STRUCTURE AND TRANSPORT)
M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski and T. Mizuno
"Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons"
2009 Materials Research Society, Vol.1145-MM10-01-1-7
2008
M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski and M. Tabe
"Observation of individual dopants in a thin silicon layer by low temperture Kelvin Prove Force Microscope"
Appl. Phys. Lett., Vol.93, No.14, pp.142101-1-3
Y. Fan, R. Nuryadi, Z. A. Burhanudin, M. Tabe
"Thermal agglomeration of ultrathin silicon-on-insulator layers: crystalline orientation dependence"
Jpn. J. Appl. Phys., Vol.47, No.3, pp.1461-1464
M. Tabe, R. Nuryadi, D.Moraru, Z. A. Burhanudin, K. Yokoi and H. Ikeda
"Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection"
ACTA PHYSICA POLONICA A, Vol.113, No.3, pp.811-814
2007
M. Ligowski, R. Nuryadi, A. Ichiraku, M.Anwar, R. Jablonski, M. Tabe
"KFM measurements of an ultrathin SOI-FET channel surface"
Recent Advances in Mechatronics, pp.556-560, Springer
M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi and H. Ikeda
"Manipulation of single-electrons in Si nanodevices@-Interplay with photons and ions-"
Recent Advances in Mechatronics, pp.500-504, Springer
D. Moraru, Y. Ono, H. Inokawa and M. Tabe
"Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires"
Physical Review B, Vol.76, no.7, pp.075332-1-5
(selected for Virtual Journal of Nanoscale Science & Technology, Volume 16, Issue 10 (September 3, 2007), ELECTRONIC STRUCTURE AND TRANSPORT)
Z. A. Burhanudin, R. Nuryadi and M. Tabe
"Detection of field-induced single- acceptor ionization in Si by single-hole-tunneling transistor"
Appl. Phys. Lett., Vol.91, No.4, pp.042103-1-3
2006
H. Ikeda and M. Tabe
"Numerical study of turnstile operation in random-multidot-channel field-effect transistor"
J. Appl. Phys., Vol. 99, pp.073705-1-6
(selected for Virtual Journal of Nanoscale Science & Technology, Volume 13, Issue 15 (April 17, 2006), ELECTRONIC STRUCTURE AND TRANSPORT)
D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda and M. Tabe
"Fowler-Nordheim Current Oscillations in Si(111)/SiO2/twisted-Si(111) Tunneling Structures"
Jpn. J. Appl. Phys., Vol.45, No.11, pp.L316-L318
Y. Ishikawa, C. Yamamoto and M. Tabe
"Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network"
Appl. Phys. Lett., Vol.88, pp.073112-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Volume 13, Issue 9 (March 6, 2006), ELECTRONIC STRUCTURE AND TRANSPORT)
R. Nuryadi, Y. Ishikawa and M. Tabe
"Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array"
Phys. Rev. B, Vol. 73, pp.045310-1-7
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa and M. Tabe
"Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer"
Thin Solid Films, Vol.508, pp.235-238
2005
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe and Y. Ono
"Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate"
Appl. Phys. Lett. Vol.87, pp.121905-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Vol. 12, Issue 13 (September 26, 2005), ADVANCES IN FABRICATION AND PROCESSING)
M. Maeda, T. Watanabe, Y. Imai, Y. Ishikawa and M. Tabe
"Diffusion of Li in the silicon oxide films and evaluation of Li-induced surface potential"
Appl. Surf. Sci. Vol.244, pp.61-64
R.Nuryadi, H. Ikeda, Y. Ishikawa and M. Tabe
"Current fluctuation in single-hole transport through a two-dimensional Si multidot"
Appl. Phys. Lett. Vol.86, pp.133106-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Vol. 11, Issue 13 (April 4, 2005), ELECTRONIC STRUCTURE AND TRANSPORT)
Y. Ishikawa, K. Yamauchi, C. Yamamoto and M. Tabe,
"Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding Artificial Dislocation Network"
Materials Research Society Symposium Proceedings vol. 864, pp.E6.5.1-E6.5.6
Y. Ishikawa, H. Ikeda and M. Tabe
"Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/SiO2 double-barrier structure"
Appl. Phys. Lett., Vol.86, pp.013508-1-3
(selected for Virtual Journal of Nanoscale Science & Technology, Vol. 11, Issue 2 (January 17, 2005), ELECTRONIC STRUCTURE AND TRANSPORT)
2004
H. Ikeda, R. Nuryadi, Y. Ishikawa and M. Tabe
"Photoinduced effects on single-charge tunneling in a Si two-dimensional multi-dot FET"
Jpn. J. Appl. Phys., Vol.43 (2004) No.6B pp.L759 - L76
2003
R. Nuryadi, H. Ikeda, Y. Ishikawa and M. Tabe
"Ambipolar Coulomb blockade characteristics in a two-dimensional Si multi-dot device"
IEEE Trans. Nanotechnology, Vol.2,pp.231-235
S. Yamamura, S. Yamauchi, S. Watanabe, M. Tabe, T. Kasai, Y. Nonogaki, T. Urisu
"Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding"
Jpn. J. Appl. Phys., Vol.42, pp. 3942-3945
Y. Ishikawa, Y. Imai, H. Ikeda and M. Tabe
"Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on- insulator structure"
Appl. Phys. Lett., Vol.83, pp. 3162-3164
H. Ikeda, M. Iwasaki, Y. Ishikawa and M. Tabe
gResonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage"
Appl. Phys. Lett., Vol.83, pp. 1456-1458
(selected for Virtual Journal of Nanoscale Science & Technology, Vol. 8, Issue 8 (August 25, 2003), ELECTRONIC STRUCTURE AND TRANSPORT)
2002
K.Sawada, M.Tabe, Y.Ishikawa and M.Ishida
"Field Electron Emission Device Using Silicon Nano-Protrusions"
J. Vac. Sci. Technol. B, Vol.20, pp.787-790
Y. Ishikawa, M. Kumezawa, Ratno Nuryadi and M.Tabe
"Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer"
Appl. Surf. Sci., Vol.190, pp. 11-15
R. Nuryadi, Y. Ishikawa, Y. Ono and M. Tabe
"Thermal agglomeration of single-crystalline Si Layer on buried SiO2 in ultrahigh vacuum"
J. Vac. Sci. Technol. B, Vol.20, pp.167-172
2001
Y. Ishikawa, T. Ishihara, M. Iwasaki and M.Tabe
"Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure"
Electronics Letters, Vol.37, pp.1200-1201
K. Sawada, M. Tabe, M. Iwatsuki, Y. Ishikawa and M. Ishida
"Field Electron Emission from Si Nanoprotrusions"
Jpn. J. Appl. Phys., Vol.40 No.8A pp.L832-L834
M. Tabe, M. Kumezawa, Y. Ishikawa and T. Mizuno
"Quantum confinement effect in Si quantum well and dot structures fabricated from ultrathin silicon-on-Insulator wafers"
Appl. Surf. Sci., Vol.175/176, pp.614-619
Y. Ishikawa, M. Kosugi and M. Tabe
"Effect of nanometer-scale corrugation on densities of gap states and fixed charges at the thermally-grown SiO2/Si Interface"
J. Appl. Phys., Vol.89, No.2, pp.1256-1261
(selected for Virtual Journal of Nanoscale Science & Technology, Vol. 3, Issue 2 (January 8, 2001), SURFACE AND INTERFACE PROPERTIES)
Y. Ishikawa, M. Kosugi, T. Tsuchiya, and M. Tabe
"Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface"
Jpn. J. Appl. Phys., Vol.40, pp.1866-1869
M. Tabe, M. Kumezawa and Y. Ishikawa
"Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate"
Jpn. J. Appl. Phys., Vol.40, No.2B, pp.L131-L133
2000
R. Nuryadi, Y. Ishikawa and M. Tabe
"Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon- on-insulator structure"
Appl. Surf. Sci., Vol.159-160, pp.121-126
Y. Ishikawa, M. Kosugi, M. Kumezawa, T. Tsuchiya, M. Tabe
"Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer- scale local oxidation"
Thin Solid Films, Vol.369, pp.69-72
PUBLICATIONS
@2000-2009