Research Objective　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 　 We are studying "silicon-based single-dopant atom devices". Research topics under way are the following: single-atom single-electron transistors, single-electron memories and single-electron turnstile devices by using a few dopant atoms, interaction between photons and dopant atom devices, observation of single-dopant potential in Si channel by low-temperature KFM, and first principle calculations of single-dopant-related electronic states and carrier transport. 　　 ACTIVITIES 　Research Objectives Recent Results Reported by our Group Future Direction of Research Events