1999
M. Tabe and T. Yamamoto
"Reply to "Comment on 'Initial stages of nitridation of Si (111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies' by M. Tabe and T. Yamamoto""
Surf. Sci. Vol.431, p.281
Y. Ishikawa, Shigenori Makita, Jianhua Zhang, Toshiaki Tsuchiya and M.Tabe
"Capacitance-voltage study of silicon-on-insulator structure with an ultrathin buried SiO2 layer fabricated by wafer bonding"
Jpn. J. Appl. Phys. Vol.38, pp.L789-L791
M. Tabe, M. Kumezawa, T. Yamamoto, S. Makita, T. Yamaguchi and Y. Ishikawa
"Formation of high-density silicon dots on a silicon-on-insulator substrate"
Appl. Surf. Sci. Vol.142, pp.553-557
M. Tabe, Y. Terao, R. Nuryadi, Y. Ishikawa, N. Asahi and Y. Amemiya
"Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications"
Jpn. J. Appl. Phys. Vol.38, pp.593-596
1998
T. Yamaguchi, M. Nasu, Z-T Jiang, M. Tabe and Y. Kanda
"Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers"
Thin Solid Films, vol. 313-314, pp. 264-269
M. Tabe, T. Yamamoto, T. Nagasawa and K. Murakami
"Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei"
Jpn. J. Appl. Phys. Vol.37 Part 1, No 3B, pp.1576-1579
M. Tabe, Y. Terao, N. Asahi and Y. Amemiya
"Photoirradiation Effects in a Single-Electron Tunnel Junction Array"
IEICE Trans. Electron., Vol. E81-C, No.1, pp.36-41
1997
M. Tabe, N. Asahi, Y. Amemiya and Y. Terao
"Simulations of Relaxation Process for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays"
Jpn. J. Appl. Phys. Vol.36, Part 1, No. 6B, pp.4176-4180
M. Tabe, T. Yamamoto and Y. Terao
"Nitridation and subsequent oxidation process of Si (111) and (100) surfaces for high density Si pillar formation"
Appl. Surf. Sci. 117/118, pp.131-135
T. Yamaguchi, A. H. Jayatissa, M. Aoyama and M. Tabe
"Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry"
Appl. Surf. Sci. 113/114, pp.493-498
M. Tabe and T. Yamamoto
"Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies"
Surf. Sci. 376, pp.99-112
1996
Y.Ono, Y. Takahashi, S. Horiguchi, K. Murase and M. Tabe
"Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film"
J. Appl. Phys. 80, No.8, pp.4450-4457
H.Kageshima and M.Tabe
"Theoretical Calculation of Core Level Shifts for O/Si (111) Surfaces"
Surf. Sci. Vol.351, pp.53-63
M.Tabe and T.Yamamoto
"Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation"
Appl. Phys. Lett. Vol.69, No.15, pp. 2222-2224
1995
S.Horiguchi, Y.Nakajima, Y.Takahashi and M.Tabe
"Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on the {100} Plane"
Jpn. J. Appl. Phys. 34, pp.5489-5498
Y.Ono, M.Nagase, M.Tabe and Y.Takahashi
"Thermal Agglomeration of Thin Single Crystal Si on SiO2 in Vacuum"
Jpn. J. Appl. Phys. 34, pp.1728-1735
Y.Takahashi, T.Furuta, T.Ishiyama and M.Tabe
"Photoluminescence from Silicon Quantum Well Formed on SIMOX Substrate"
Jpn. J. Appl. Phys. 34, pp.950-954
Y.Nakajima, Y.Takahashi, S.Horiguchi, K.Iwadate, H.Namatsu, K.Kurihara and M.Tabe
"Quantized Conductance of a Silicon Wire Fabricated Using SIMOX Technology"
Jpn. J. Appl. Phys. 34, pp.1309-1314
A.Fujiwara, Y.Takahashi, K.Murase and M.Tabe
"Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands"
Appl. Phys. Lett. 67, No.20, pp.2957-2959
M.Tabe
"Thermal Nitridation of Si (111) Surfaces with N2 Molecules Studied by X-Ray Photoelectron Spectroscopy"
Jpn. J. Appl. Phys.Vol.34, Part2, No.10B,pp.L1375-L1378
Y.Takahashi, N.Nagase, H.Namatsu, K.Kurihara, K.Iwadate, Y.Nakajima, S.Horiguchi, K.Murase and M.Tabe
"Fabrication technique for Si single-electron transistor operating at room temperature"
Electron. Lett. 31, No.2, pp.136-137
1994
H.Kageshima, Y.Ono, M.Tabe, and T.Ohno
"Origin of Dark Regions in Scanning Tunneling Microscopy Images Formed by Thermal Oxidation of Si(111) Surface"
Jpn. J. Appl. Phys. 33, Part 1, No.7A, pp.4070-4074
H.Kageshima and M.Tabe
"First-Principle Calculation of Core Level Energy Shifts on the Initial Oxidation Stage of Si(111) Surface"
Control of Semiconductor Interfaces, Elsevier Science B.V. pp.227-232
Y.Takahashi, T.Ishiyama, and M.Tabe
"Counter-oxidation of superficial Si in single-crystalline Si on SiO2 structure"
Appl. Phys. Lett. 65, No.23, pp.2987-2989
Y.Nakajima, Y.Takahashi, S.Horiguchi, K.Iwadate, H.Namatsu, K.Kurihara, and M.Tabe
"Fabrication of a silicon wire surrounded by silicon dioxide and its transport properties"
Appl. Phys. Lett. 65, No.22, pp.2833-2835
1993
Y.Ono, M.Tabe and H. Kageshima
"Scanning-Tunneling-Microscopy Observation of Thermal Oxide Growth on Si(111)7x7 Surfaces"
Phys.Rev.B vol.48, No.19, pp.14291-14300
T.Karasawa, Y.Kunii and M.Tabe
"Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH4-B2H6 Molecular Beam Epitaxy"
J.J.A.P. vol.32, Part1, No.3A, pp.1039-1044
Y.Omura, S.Horiguchi, M.Tabe and K.Kishi
"Quantum-Mechanical Effects on the Threshold Voltage of Ultrathin-SOI nMOSFET's"
IEEE EDL vol.14, No.12, pp.569-571
Y.Ono, M.Tabe and Y.Sakakibara
"Segregation and Defect Termination of Fluorine at SiO2/Si Interfaces"
Appl.Phys.Lett. vol.62, No.4, pp.375-377
1991
M.Tabe and M.Tanimoto
"Tunneling Spectroscopy of Ultrathin Oxide on Si Structure and H-Terminated Si Surfaces"
Appl.Phys.Lett. vol.58, No.19, pp.2105-2107
H.Yamada and M.Tabe
"Ultra-Dry Annealing after Polysilicon Electrode Formation for Improving the TDDB Lifetime of Ultra-Thin Silicon Oxide Films in MOS Diodes"
IEEE EDL vol.12, No.10, pp.536-538
1990
M.Tabe, M.Takahashi, T.Ichimori and Y.Sakakibara
"Oxygen-Doped and Nitrogen-Doped Silicon Films Prepared by Molecular Beam Epitaxy"
Thin Solid Films vol.184, pp.373-377
PUBLICATIONS
　1990-1999