1. 査読付論文 (Reviewed Journal Papers)

[J1]   Hiroaki Satoh, Ken Kawakubo, Atsushi Ono, and Hiroshi Inokawa, "Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency," IEEE Photonics Technology Letters, Vol. 25, No. 12, pp. 1133-1136, Jun. 15, 2013.

[J2]   Hiroshi Inokawa, Hiroaki Satoh, Ken Kawakubo, and Atsushi Ono, "Enhancement of SOI Photodiode Sensitivity by Aluminum Grating," ECS Trans., Vol. 53, No. 5, pp. 127-130, May, 2013.

[J3]   Ajay Tiwari, Hiroaki Satoh, Makoto Aoki, Masanori Takeda, Norihisa Hiromoto, and Hiroshi Inokawa, "Analysis of Microbolometer Characteristics for Antenna-Coupled THz Detectors," Asian J. Chem., Vol. 25, Supplementary Issue, pp. S358-S360, Mar. 2013.

[J4]   Hiroaki Satoh, Atsushi Ono, and Hiroshi Inokawa, "Enhanced Visible Light Sensitivity by Gold Line-and-Space Grating Gate Electrode in Thin Silicon-On-Insulator p-n Junction Photodiode," IEEE Trans. Electron Devices, Vol. 60, No. 2, pp. 812-818, 2013.

[J5]   Hongguan Yang, Hiroshi Inokawa, "A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region," Solid-State Electronics, Vol. 76, pp. 5–7, July 2, 2012.

[J6]   Wei Du, Hiroshi Inokawa, Hiroaki Satoh, and Atsushi Ono, "Single-Photon Detection by a Simple Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor," Jpn. J. Appl. Phys., Vol. 51, No. 6, pp. 06FE01_1-4, June 20, 2012.

[J7]   Mingu Jo, Yuki Kato, Masashi Arita, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi, "Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device," IEICE Transactions on Electronics, Vol. E95.C, No. 5, pp. 865-870, May 2012.

[J8]   H. Satoh and H. Inokawa, "Surface Plasmon Antenna with Gold Line and Space Grating for Enhanced Visible Light Detection by Silicon-On-Insulator Metal-Oxide-Semiconductor Photodiode," IEEE Trans. Nanotechnol., Vol. 11, No. 2, pp. 346-351, March 2012.

[J9]   Atsushi Ono, Yuki Matsuo, Hiroaki Satoh, and Hiroshi Inokawa, "Sensitivity Improvement of Silicon-On-Insulator Photodiode by Gold Nanoparticles with Substrate Bias Control," Appl. Phys. Lett., Vol. 99, No. 6, pp. 062105_1-3, Aug. 9, 2011.

[J10]  Wei Du, Hiroshi Inokawa, Hiroaki Satoh and Atsushi Ono, "SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting," Optics Letters, Vol. 36, No. 15, pp. 2800-2802, July 20, 2011.

[J11]  Touichiro Goto, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara and Keiichi Torimitsu, "Electrical Characterization of Terphenyl-Based Molecular Devices," Jpn. J. Appl. Phys., Vol. 50, No. 7, pp. 071603-1~6, July 20, 2011.

[J12]  Hiroshi Inokawa, Wei Du, Mitsuru Kawai, Hiroaki Satoh, Atsushi Ono, Vipul Singh, "Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity," Advanced Materials Research, Vol. 222, pp. 3-7, April 2011.

[J13]  Atsushi Ono, Hiroaki Satoh, Hiroshi Inokawa, "High-Efficiency SOI Photodetector Utilizing Surface Plasmon Resonance in Gold Corrugated Structure," Advanced Materials Research, Vol. 222, pp. 154-157, April 2011.

[J14]  Hiroaki Satoh, Yuki Matsuo, Hiroshi Inokawa, Atsushi Ono, "Investigation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode," Advanced Materials Research, Vol. 222, pp. 201-204, April 2011.

[J15]  Yasuo Takahashi, Mingyu Jo, Takuya Kaizawa, Yuki Kato, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa and Jung-Bum Choi, "Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications," Key Engineering Materials, Vol. 470, pp. 175-183, Feb. 21, 2011.

[J16]  Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, and Hiroaki Satoh, "Fabrication Method of Sub-100 nm Metal–Oxide–Semiconductor Field-Effect Transistor with Thick Gate Oxide," Jpn. J. Appl. Phys., Vol. 49, No. 12, pp. 128002-1~2, Dec. 20 2010.

[J17]  Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, and Hiroaki Satoh, "Low Frequency Noise Characterization in Metal–Oxide–Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures," Jpn. J. Appl. Phys., Vol. 49, No. 3, pp. 034203-1~4, Mar. 23 2010.

[J18]  Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi, "Fabrication of double-dot single-electron transistor in silicon nanowire," Thin Solid Films, Vol. 518, No. 6(1), pp. S186-S189, 1 January 2010.

[J19]  Hiroshi Inokawa, Vipul Singh, and Hiroaki Satoh, "Analysis of Current Noise in MOSFET-Based Charge-Transfer Device," Journal of Automation, Mobile Robotics & Intelligent Systems, Vol. 3, No. 4, pp. 72-75, Aug. 10, 2009.

[J20]  Touichiro Goto, Hiroshi Inokawa, and Keiichi Torimitsu, "Geometrical effect in submicrometer channel organic field effect transistors, "Thin Solid Films, Vol. 518, No. 2, pp. 579–582, July 10, 2009.

[J21]       Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, and Jung-Bum Choi, "Single-Electron Device With Si Nanodot Array and Multiple Input Gates," IEEE Trans. Nanotechnol., Vol. 8, No. 4, pp. 535-541, July 9, 2009.

[J22]Kaizawa Takuya, Jo Mingyu, Arita Masashi, Fujiwara Akira, Yamazaki Kenji, Ono Yukinori, Inokawa  Hiroshi, Takahashi Yasuo, and Choi Jung-Bum, "Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs," International Journal of Nanotechnology and Molecular Computation, Vol. 1, No. 2, pp. 58-69, Apr.-June 2009.

[J23]  Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, and Hiroshi Yamaguchi, "Single-Electron-Resolution Electrometer Based on Field-Effect Transistor," Jpn. J. Appl. Phys. Vol. 47, No. 11, pp. 8305-8310, Nov. 14 2008.

[J24]  Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi, "Silicon nanodot-array device with multiple gates," Mater. Sci. Semicond. Process, Vol. 11, No. 5-6, pp. 175–178, Oct. 2008.

[J25]  Neil M. Zimmerman, William H. Huber, Brian Simonds, Emmanouel Hourdakis, Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, and Mark W. Keller, "Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability," J. Appl. Phys., Vol. 104, No. 3, pp. 033710_1-12, Aug. 7 2008.

[J26]  Y. Ono, M.A.H. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi, "Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics," Appl. Surf. Sci., Vol. 254, No. 19, pp. 6252–6256, Jul. 30, 2008.

[J27]  Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara and Yoshiro Hirayama, "A gate-defined silicon quantum dot molecule," Appl. Phys. Lett., Vol. 92, No. 22, pp. 222104_1-3, 2 June 2008.

[J28]  Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono, Hiroaki Satoh, "Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs," IEEJ Trans. EIS, Vol. 128, No. 6, pp. 905-911, 2008 (in Japanese).

[J29]  H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama, "Pauli-spin-blockade transport through a silicon double quantum dot," Phys. Rev. B, Vol. 77, No. 7, pp. 073310_1-4, 21 February 2008.

[J30]  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi, "Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors," Appl. Phys. Lett., Vol. 92, No. 6, pp. 062105_1-3, 13 February 2008.

[J31]  Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa, "Silicon single-charge transfer devices," J. Phys. Chem. Solid, Vol. 69, No. 2-3, pp. 702–707, 6 February 2008.

[J32]  Daniel Moraru, Yukinori Ono, Hiroshi Inokawa and Michiharu Tabe, "Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires," Phys. Rev. B, Vol. 76. No. 7, pp. 075332_1-5, 17 August 2007.

[J33]  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa and Y. Takahashi "Infrared detection with silicon nano-field-effect transistors" Appl. Phys. Lett. Vol. 90 No. 22 pp. 223108_1-3, 30 May 2007.

[J34]  W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu "Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor" IEICE Trans. Electron. Vol. E90C No. 5 pp. 943 -948 MAY 2007.

[J35]  K. Degawa, T. Aoki, T. Higuchi, H. Inokawa and Y. Takahashi, "Design of a Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors," Journal of Multiple-Valued Logic and Soft Computing, Vol. 13, No 3, pp. 249-266, May 21, 2007.

[J36]  Hiroshi Inokawa , Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi and Keiichi Torimitsu "Field-Effect Transistor with Deposited Graphite Thin Film" Jpn. J. Appl. Phys. Vol. 46, No. 4B, pp. 2615-2617, April 24 2007.

[J37]  J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa and H. Yamaguchi "Impact of Space-Energy Correlation on Variable Range Hopping in a Transistor" Phys. Rev. Lett. Vol. 98, No. 16, pp. 166601_1-4, 19 April 2007

[J38]  Touichiro Goto, Hiroshi Inokawa, Koji Sumitomo, Masao Nagase, Yukinori Ono and Keiichi Torimitsu "Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices" Jpn. J. Appl. Phys. Vol. 46, No. 4A, pp. 1731-1733, April 5 2007.

[J39]  Kenichi Kanzaki, Satoru Suzuki, Hiroshi Inokawa, Yukinori Ono, Aravind Vijayaraghavan, Yoshihiro Kobayashi "Mechanism of Metal-Semiconductor Transition in Electric Properties of Single-walled Carbon Nanotubes induced by Low-energy Electron Irradiation" J. Appl. Phys. Vol. 101 No. 3 pp. 034317_1-4, 14 February 2007.

[J40]  Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, and Masaya Notomi "Fast All-Optical Switching using Ion-Implanted Silicon Photonic Crystal Nanocavities" Appl. Phys. Lett. Vol. 90 No. 3 pp. 031115_1-3, 19 January 2007.

[J41]  Katsuhiko Nishiguchi, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, and Yasuo Takahashi, "Long Retention of Gain-Cell Dynamic Random Access Memory With Undoped Memory Node" IEEE Electron Device Lett., VOL. 28, NO. 1, pp. 48-50 JANUARY 2007

[J42]  Neil M. Zimmerman and Brian J. Simonds Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa "Charge offset stability in tunable-barrier Si single-electron tunneling devices" Appl. Phys. Lett. Vol. 90 No. 3 pp. 033507_1-3, 17 January 2007.

[J43]  Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, and Yasuo Takahashi "Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K" Phys. Rev. B Vol. 74, No. 23, pp. 235317_1-9, 14 December 2006

[J44]  Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, and Yasuo Takahashi "Electrostatically gated Si devices: Coulomb blockade and barrier capacitance" Appl. Phys. Lett. Vol. 89 No.5 pp. 052102_1-3 July 31 2006.

[J45]  Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa "Quantum effects in the capacitance between a pair of thin and slightly separated SrTiO3 slabs: A first-principles study" Phys. Rev. B Vol. 74 No.3 pp. 035408_1-6 July 10 2006.

[J46]  Touichiro Goto, Katsuhiko Degawa, Hiroshi Inokawa, Kazuaki Furukawa, Hiroshi Nakashima, Koji Sumitomo, Takafumi Aoki, Keiichi Torimitsu "Molecular-Mediated Single-Electron Devices Operating at Room Temperature" Jpn. J. Appl. Phys. Vol. 45, No. 5A, pp. 4285-4289, May 9 2006.

[J47]  Katsuhiko Nishiguchi, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, and Yasuo Takahashi "Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology" Appl. Phys. Lett. Vol. 88, No. 18, pp. 183101_1-3 May 1 2006.

[J48]  Nicolas Clement, Hiroshi Inokawa, Yukinori Ono "Studies on Metal-Oxide-Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications" Jpn. J. Appl. Phys. Vol. 45, No. 4B, pp. 3606-3608, April 25 2006.

[J49]  Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart B. Martin "Single-electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor" Appl. Phys. Lett. Vol. 88 No.5 pp. 053121_1-3 FEB 2 2006.

2. 国際会議（International Conference）

[C1]Hiroshi Inokawa, Hiroaki Satoh, Atsushi Ono, Dedy Septono Catur Putranto, Wei Du, Purnomo Sidi Priambodob, Djoko Hartanto, "Evolution of Photodetectors by Silicon-On-Insulator Material," Proc. 13th International Conference on QIR (Quality in Research) pp. 890-894, Yogyakarta, Indonesia, 25-28 June 2013.
Quality in Research (QiR) 2013 Best Paper Award

[C2]Dedy Septono Catur Putranto, Hiroaki Satoh, Atsushi Ono, Hiroshi Inokawa, Purnomo Sidi Priambodo, Djoko Hartanto, and Wei Du, "Substrate Bias Effects on Noise and Minority Carrier Lifetime in SOI MOSFET Single-Photon Detector," Proc. 13th International Conference on QIR (Quality in Research) pp. 908-911, Yogyakarta, Indonesia, 25-28 June 2013.

[C3]Hiroaki Satoh, Shohei Iwata, Ken Kawakubo, Atsushi Ono, and Hiroshi Inokawa, "Refractive Index Measurement by SOI Photodiode with Gold Surface Plasmon," 2013 IEEE Silicon Nanoelectronics Workshop (SNW-13) pp. 109-110 (Kyoto, Japan, 2011.6.9-10).

[C4]Hiroshi Inokawa, Hiroaki Satoh, Ken Kawakubo and Atsushi Ono, "Enhancement of SOI Photodiode Sensitivity by Aluminum Grating," The 223rd Electrochemical Society (ECS) Meeting, Abstract No. E6-0900 (Toronto, Canada, May 12-16, 2013).

[C5]Ajay Tiwari, Hiroaki Satoh, Makoto Aoki, Masanori Takeda, Norihisa Hiromoto, and Hiroshi Inokawa, "Analysis of Microbolometer Characteristics for Antenna-Coupled THz Detectors," International Conference on Nanoscience and Nanotechnology (ICONN 2013), (SRM University, Potheri, India, 2013.3.18-20).

[C6]Ajay Tiwari, Hiroaki Satoh, Makoto Aoki,  Masanori Takeda, Norihisa Hiromoto, and  Hiroshi Inokawa, "Fabrication and Analytical Modeling of Microbolometer," Proc. 2013 Int. Workshop on Advanced Nanovision Science, pp. 18-24 (Hamamatsu, 2013.1.21-22).

[C7]Dedy Septono Catur Putranto, Wei Du, Hiroaki Satoh, Atsushi Ono, Purnomo Sidi Priambodo, Djoko Hartanto, and Hiroshi Inokawa, "Analysis of Noise in SOI MOSFET for Single-Photon Detector," The 14th Takayanagi Kenjiro Memorial Symposium, pp. S3-12-1~4 (Hamamatsu, Japan, Nov. 27-28, 2012).

[C8]Hiroaki Satoh, Ken Kawakubo, Yoshikazu Anma, Atsushi Ono, and Hiroshi Inokawa, "Enhancement of Light Sensitivity in Silicon-on-Insulator Photodiode by Line-and-Space Grating," The 14th Takayanagi Kenjiro Memorial Symposium, pp. S6-3-1~5 (Hamamatsu, Japan, Nov. 27-28, 2012).

[C9]Hiroaki Satoh, Ken Kawakubo, Atushi Ono and Hiroshi Inokawa, "Extraordinary Incident Angle Dependence of External Quantum Efficiency in SOI Photodiode with Silver Line-and-Space Grating," 2012 Int. Conf. Solid State Devices and Materials (SSDM) PS-7-26L pp. 272-273 (Kyoto, 2012.9.25-27).

[C10]     Dedy Septono Catur Putranto, Du Wei, Hiroaki Satoh, Atsushi Ono, Purnomo Sidi Priambodo, Djoko Hartanto, Hiroshi Inokawa, "Analysis of Hole Lifetime in SOI MOSFET Single-Photon Detector," The International Conference on Nano Electronics Research and Education (ICNERE) A2.05, p. 19 (Bali, Indonesia, July 8-10, 2012).

[C11]     Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Yasuo Takahashi, "High-frequency properties of Si single-electron transistor," 2012 IEEE Silicon Nanoelectronics Workshop (SNW-12) pp. 61-62 (Honolulu, Hawaii, 2012.6.10-11).

[C12]     Wei Du, Dedy Septono Putranto, Hiroaki Satoh, Atsushi Ono, Purnomo Sidi Priambodo, Djoko Hartanto, Hiroshi Inokawa, "Optoelectrical Lifetime Evaluation of Single Holes in SOI MOSFET," 2012 IEEE Silicon Nanoelectronics Workshop (SNW-12) pp. 149-150 (Honolulu, Hawaii, 2012.6.10-11).

[C13]     Wei Du, Hiroshi Inokawa, Hiroaki Satoh and Atsushi Ono, "Room-Temperature Single-Photon Detector Based on a Simple SOI MOSFET," The 1st International Symposium on Photonics and Electronics Convergence (ISPEC2011) P-22, p. 58 (Tokyo, Japan, Nov. 14-15, 2011).

[C14]     Wei Du, Hiroshi Inokawa and Hiroaki Satoh, "Single-Photon Detection by a Simple SOI MOSFET," 24th International Microprocesses and Nanotechnology Conference (MNC 2011), 26C-6-5L (Kyoto, Japan, Oct. 24-27, 2011).

[C15]     Masahiro Ishii, Atsushi Nakamura, Hiroshi Inokawa and Jiro Temmyo, "Field-Effect Transistor with Graphene by Direct Alcohol CVD," 2011 Int. Conf. Solid State Devices and Materials (SSDM) K-8-6 pp. 1292-1293 (Nagoya, 2011.9.28-30).

[C16]     Hiroaki Satoh, Hiroshi Inokawa and Atsushi Ono, "Enhanced Light Sensitivity of Thin SOI Photodiode by Metal Line-and-Space Grating of Various Materials," 2011 Int. Conf. Solid State Devices and Materials (SSDM) P-7-25 pp. 266-267 (Nagoya, 2011.9.28-30).

[C17]     Atsushi Ono, Hiroaki Satoh, Ryo Kawai and Hiroshi Inokawa, "Periodic Arrangement of Au Nanoparticles on SOI Photodiode for Absorption Enhancement," 2011 Int. Conf. Solid State Devices and Materials (SSDM) P-7-24 pp. 264-265 (Nagoya, 2011.9.28-30).

[C18]     Hiroshi Inokawa, Wei Du, Mitsuru Kawai, Hiroaki Satoh, Atsushi Ono, and Vipul Singh (Invited), "Photodetector Based on MOSFET Electrometer with Single-Electron Sensitivity," International Conference on Nanoscience & Technology, China 2011 (ChinaNANO 2011) paper# 5I-005, p. 23 (Beijing, China, 2011.9.7-9).

[C19]     Michito Sinohara, Yuki Kato, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, and Yasuo Takahashi, "Observation of New Current Peaks of Si Single-Electron Transistor with a Single-Hole Trap," 2011 IEEE Silicon Nanoelectronics Workshop (SNW-11) pp. 59-60 (Kyoto, Japan, 2011.6.12-13).

[C20]     Wei Du, Hiroshi Inokawa, Hiroaki Satoh and Atsushi Ono, "Peculiar Hole Lifetime in SOI MOSFET Single-Photon Detector," 2011 IEEE Silicon Nanoelectronics Workshop (SNW-11) pp. 47-48 (Kyoto, Japan, 2011.6.12-13).

[C21]     Hiroaki Satoh, Hiroshi Inokawa, and Atsushi Ono, "Enhancement of Light Sensitivity of Thin SOI photodiode by Gold Line-and-Space Grating for Selected Wavelength and Polarization," 2011 IEEE Silicon Nanoelectronics Workshop (SNW-11) pp. 33-34 (Kyoto, Japan, 2011.6.12-13).

[C22]     Wei Du, Hiroshi Inokawa and Hiroaki Satoh (Invited), "Room Temperature Photon-Number-Resolving Detector Based on SOI MOSFET," The 4th International Symposium on Photoelectronic Detection and Imaging (ISPDI 2011) Conference 4, Session 2, paper #7, p. 61 (Beijing, China, May 24-26, 2011).

[C23]     Hiroshi Inokawa, Wei Du, Mitsuru Kawai, Hiroaki Satoh, Atsushi Ono and Vipul Singh (Invited), "Single-Photon Detection by SOI MOSFET," The 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK), pp. 24-25 (Osaka, Japan, May 19-20, 2011).

[C24]     Vipul Singh, Hiroshi Inokawa and Hiroaki Satoh, "Biasing Effects in MOSFET Based Charge Transfer Devices," 23rd International Microprocesses and Nanotechnology Conference (MNC 2010), 11B-5-3 (Kokura, Japan, Nov. 9-12, 2010).

[C25]     Yuki Matsuo, Atsushi Ono, Hiroaki Satoh and Hiroshi Inokawa, "Enhanced Sensitivity of SOI Photodiode by Au Nanoparticles," 2010 Int. Conf. Solid State Devices and Materials (SSDM) D-7-3 pp. 1060-1061 (Tokyo, 2010.9.22-24).

[C26]     Mitsuru Kawai, Vipul Singh, Makoto Nagasaka, Hiroaki Satoh and Hiroshi Inokawa, "Analysis of MOSFET Electrometer Sensitivity by Radio-Frequency Reflection," 2010 Int. Conf. Solid State Devices and Materials (SSDM) P-9-13 pp. 491-492 (Tokyo, 2010.9.22-24).

[C27]     Wei Du, Hiroshi Inokawa and Hiroaki Satoh, "Room-Temperature Number-Resolving Single-Photon Detection by SOI MOSFET," 2010 Int. Conf. Solid State Devices and Materials (SSDM) P-9-14L pp. 493-494 (Tokyo, 2010.9.22-24).

[C28]     Touichiro Goto, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara and Keiichi Torimitsu, "Effect of Device Structure on Electrical Conduction of Terphenyl-based Molecule," 2010 Int. Conf. Solid State Devices and Materials (SSDM) P-10-7 pp. 507-508 (Tokyo, 2010.9.22-24).

[C29]     A. Ono, H. Satoh and H. Inokawa, "High-efficiency SOI photodetector by surface plasmon resonance excited on gold corrugated structure," The 9th International Conference on Global Research and Education (Inter-Academia 2010) pp. 120-121 (Riga, Latvia, 2010.8.9- 12).

[C30]     H. Satoh, Y. Matsuo, H. Inokawa and A. Ono, "Investigation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode," The 9th International Conference on Global Research and Education (Inter-Academia 2010) pp. 118-119 (Riga, Latvia, 2010.8.9- 12).

[C31]     H. Inokawa, H. Satoh, A. Ono, V. Singh and W. Du (Invited), "Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity," The 9th International Conference on Global Research and Education (Inter-Academia 2010) pp. 7-8 (Riga, Latvia, 2010.8.9- 12).

[C32]     Hiroaki Satoh, Yuki Matsuo, Hiroshi Inokawa, and Atsushi Ono, "Evaluation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SOI-MOS Photodiode," 2010 IEEE Silicon Nanoelectronics Workshop (SNW-10) paper# P2.10, pp. 131-132 (Honolulu, Hawaii, 2010.6.13-14).

[C33]     Vipul Singh, Hiroshi Inokawa and Hiroaki Satoh, "Effect of Oxide Thickness on the Low-Frequency Noise in MOSFET-Based Charge Transfer Devices," 2010 IEEE Silicon Nanoelectronics Workshop (SNW-10) paper# P2.9, pp. 129-130 (Honolulu, Hawaii, 2010.6.13-14).

[C34]     Yuki Kato, Mingyu Jo, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, Yasuo Takahashi and Jung-Bum Choi, "Analysis of Tunneling Potential of Si SETs Fabricated by Pattern-Dependent Oxidation," 2010 IEEE Silicon Nanoelectronics Workshop (SNW-10) paper# P1.21, pp. 105-106 (Honolulu, Hawaii, 2010.6.13-14).

[C35]     Vipul Singh, Hiroshi Inokawa, and Hiroaki Satoh, "Unique Short-Channel Characteristics in Sub-100 nm MOSFETs with Inversion-Layer Source/Drain," 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), 19D-10-1 pp. 508-509 (Sapporo, Japan, Nov. 16-19, 2009).

[C36]     Vipul Singh, Hiroshi Inokawa and Hiroaki Satoh: Low-Frequency Noise in MOSFET-Based Charge-Transfer Device, 2009 Int. Conf. Solid State Devices and Materials (SSDM) P-9-4 pp. 587-588 (Sendai, 2009.10.7- 9).

[C37]     M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi: Fabrication of triple-dot single-electron transistor and its single-electron-transfer operation, International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) P1-14 (Kaanapali, Hawaii, 2009.11.29-12.4).

[C38]     Hiroshi Inokawa, Vipul Singh, and Hiroaki Satoh: Analysis of Current Noise in MOSFET-Based Charge-Transfer Device, The 8th International Conference on Global Research and Education (Inter-Academia 2009) pp. 411- 416 (Kazimierz Dolny & Warsaw, Poland, 2009.9.14- 17).

[C39]     Y. Takahashi, T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, J. B. Choi (Invited): Novel-functional single-electron devices using silicon nanodot array, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009) 2B.1 (Busan, Korea, 2009.6.24-26), IEICE Technical Report ED2009-83, SDM2009-78 (2009-06) pp. 145-148.

[C40]     M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, J. B. Choi, Y. Takahashi: Fabrication of double-dot single-electron transistor in silicon nanowire, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009) 3A.9 (Busan, Korea, 2009.6.24-26), IEICE Technical Report ED2009-94, SDM2009-89 (2009-06) pp. 189-192.

[C41]     Hiroaki Satoh and Hiroshi Inokawa: Spectroscopic Response of SOI Photodiode with Gold Line-and-Space Surface Plasmon Antenna, 2009 IEEE Silicon Nanoelectronics Workshop (SNW-09) pp. 117-118 (Kyoto, Japan, 2009.6.13-14).

[C42]     M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi: Fabrication of Coupled-Dot Single-Electron Transistor in Silicon Nanowire, 2009 IEEE Silicon Nanoelectronics Workshop (SNW-09) pp. 155-156 (Kyoto, Japan, 2009.6.13-14).

[C43]     M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi: Double-dot single-electron transistor fabricated in silicon nanowire, 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6) p54-p55 (Los Angeles, USA, 2009.5.17-22).

[C44]     Yoshihiro Nishimura, Kamen Kanev, Sasamoto Akira, Takayuki Suzuki and Hiroshi Inokawa: Electromagnetic testing and image reconstruction with flexible scanning tablets, Proc. SPIE, Vol. 7292, pp. 72924I_1-9 (San Diego, USA, March 9, 2009)

[C45]     Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono and H. Inokawa: Novel-functional single-electron device using nanodot array with multiple outputs, 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices" (Sapporo, Japan, March 2-3, 2009)

[C46]     Touichiro Goto and Keiichi Torimitsu, Hiroshi Inokawa: Geometrical Effect in Submicrometer-Channel Organic Field-Effect Transistors, The 8th International Conference on Nano-Molecular Electronics (ICNME 2008) papaer# PII-52 (Kobe, Japan, December 16-18, 2008).

[C47]     Yasuo Takahashi, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa: Novel-Functional Single-Electron Device Using Nanodot Array with Multiple Inputs and Outputs, The International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICS) paper# ZI-6 (Nagoya, Japan, Dec. 9-13, 2008)

[C48]     Yoshihiro Nishimura, Kamen Kanev, Sasamoto Akira, Takayuki Suzuki, Hiroshi Inokawa: Toward a Portable Electromagnetic Testing Scanner with Advanced Image Reconstruction Capabilities, The 11th International Conference on Humans and Computers (HC2008) (Nagaoka University of Technology, Nov. 20-23, 2008).

[C49]     Y. Ono, M. A. H. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa (Invited): Single-Dopant Effect in Si MOSFETs, The IEEE Nanotechnology Materials and Devices Conference (NMDC) paper# WeA I-1 (Kyoto, Oct. 20-22, 2008).

[C50]     Hiroaki Satoh and Hiroshi Inokawa: Optimization of Gold Line and Space Antenna for Silicon-On-Insulator Metal-Oxide-Semiconductor Photodetector, 2008 Int. Conf. Solid State Devices and Materials (SSDM) E-3-2 pp. 286-287 (Tsukuba, 2008.9.24- 26).

[C51]     Hiroshi Inokawa and Hiroaki Satoh: Single-Electron-Counting Photodetectors, The 7th International Conference on Global Research and Education (Inter-Academia 2008) pp. 411- 416 (Pecs, Hungary, 2008.9.15- 18).

[C52]     Hiroaki Satoh and Hiroshi Inokawa: Gold Surface Plasmon Antenna with Line and Space Grating for Silicon-On-Insulator Metal-Oxide-Semiconductor Photodetector, The 7th International Conference on Global Research and Education (Inter-Academia 2008) pp. 432- 437 (Pecs, Hungary, 2008.9.15- 18).

[C53]     Hiroaki Satoh and Hiroshi Inokawa: "Enhancement of Light Absorption by Au L/S grating for Thin SOI Photodetector," 2008 IEEE Silicon Nanoelectronics Workshop (SNW-08) paper# M0230 (Honolulu, Hawaii, 2008.6.15-16).

[C54]     Yukinori Ono, Mohammed Khalafalla, Katsuhiko Nishiguchi, Kei Takashina, Akira Fujiwara, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi (Invited): Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), I1-3, pp. 9-10 (Hachioji, 2007.11.12-14).

[C55]     Yasuo Takahashi, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono and Hiroshi Inokawa (Invited): Novel-Functional Single-Electron Device Using Nanodot Array and Multiple Input Gates, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics (Sendai, 2007.11.8-9)

[C56]     H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono and H. Satoh: A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs, The 6th International Conference on Global Research and Education (Inter-Academia 2007) pp. 80-87 (Hamamatsu, 2007.9.26－30).

[C57]     Hiroaki Satoh  and  Hiroshi Inokawa: Analysis of 2D Photonic Crystal Frequency Converter with Nonlinear Dielectrics and Compound Waveguide Structure by Condensed Node Spatial Network Method, The 6th International Conference on Global Research and Education (Inter-Academia 2007) pp. 1029- 1036 (Hamamatsu, 2007.9.26－30).

[C58]     Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi and Yukinori Ono: Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors, 2007 Int. Conf. Solid State Devices and Materials (SSDM) B-8-1 pp. 874-875 (Tsukuba, 2007.9.19－21).

[C59]     Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa And Yasuo Takahashi (Invited): Room-temperature-operating single-electron devices using silicon nanowire MOSFET, 2007 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD) J-I06M (Gyeongju, Korea, 2007.6.25-27).

[C60]     Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, and Y. Takahashi "Dopant-mediated charge transport in boron-doped nano MOSFETs" 2007 IEEE Silicon Nanoelectronics Workshop (SNW-07) pp. 159-160 (Kyoto, 2007.6.10-11).

[C61]     D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe "Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays" 2007 IEEE Silicon Nanoelectronics Workshop (SNW-07) pp. 163-164 (Kyoto, 2007.6.10-11).

[C62]     Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, and Jung-Bum Choi "Single-electron device using Si nanodot array and multi-input gates" 2007 IEEE Silicon Nanoelectronics Workshop (SNW-07) pp. 171-172 (Kyoto, 2007.6.10-11).

[C63]     H. Inokawa, K. Nishiguchi, Y. Ono, A. Fujiwara and Y. Takahashi (Invited): Recent Progress in Integration of Silicon Single-Electron Devices, The 4th International Symposium on Ubiquitous Knowledge Network Environment, p. 90 (Sapporo, 2007.3.5-7).

[C64]     Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina,H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S. Horiguchi, H. Inokawa, and Y. Takahashi: Hopping Conduction in Buried-Channel SOI MOSFETs with Shallow Impurities, International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2007), Fr-09 (Atsugi, 2007.2.20-23).

[C65]     Takasumi Tanabe, Koji Yamada, Katsuhiko Nishiguchi, Eiichi Kuramochi, Akihiko Shinya, Hiroshi Inokawa, Satoki Kawanishi, and Masaya Notomi "Fast All-Optical Pulse Train Modulation by Silicon Photonic Crystal Nanocavities" The 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2006) ML3, pp. 122 - 123, Montreal, Canada, 29 October – 2 November 2006.

[C66]     D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe "Towards single-electron pump operation using one ac gate bias in doped Si nanowires" The 5th International Conference on Global Research and Education (Inter-Academia 2006) pp. 373-380, Iasi, Romania, 25-28 September, 2006.

[C67]     Hiroshi Inokawa, Katsuhiko Nishiguchi, Akira Fujiwara, Yukinori Ono, Yasuo Takahashi and Hiroshi Yamaguchi " Metal-Oxide-Semiconductor-Based Single-Electronics" The 5th International Conference on Global Research and Education (Inter-Academia 2006) pp. 175-184, Iasi, Romania, 25-28 September, 2006.

[C68]     Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi: Single-electron device using Si nanodot array and multi-input gates, The 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2006), D3.7, pp. 1062 - 1064 (Shanghai, China, 2006.10.23-26).

[C69]     H. Inokawa, M. Nagase, S. Hirono, T. Goto, H. Yamaguchi and K. Torimitsu: A Field-Effect Transistor with a Deposited Graphite Thin Film, 2006 Int. Conf. Solid State Devices and Materials (SSDM) A-9-5 pp. 834-835 (Yokohama, 2006.9.13－15).

[C70]     D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe: Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires, 2006 Int. Conf. Solid State Devices and Materials (SSDM) A-8-4 pp. 820-821 (Yokohama, 2006.9.13－15).

[C71]     T. Goto, H. Inokawa, K. Sumitomo, M. Nagase, Y. Ono and K. Torimitsu: Effect of UV/ozone Treatment on Nanogap Electrodes for Molecular Devices, 2006 Int. Conf. Solid State Devices and Materials (SSDM) D-7-3 pp. 912-913 (Yokohama, 2006.9.13－15).

[C72]     K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa and Y. Takahashi: Infrared detection with silicon nano transistors, 2006 Int. Conf. Solid State Devices and Materials (SSDM) A-1-2 pp. 10-11 (Yokohama, 2006.9.13－15).

[C73]     Kei Takashina, Marc-Aurèle Brun, Takeshi Ota, Duncan Maude, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, and Yoshiro Hirayama: Resistance Ridges Along Filling Factor n = 4i in SiO2/Si/SiO2 Quantum Wells, 28th International Conference on the Physics of Semiconductors (ICPS) TuA1c.7 (Vienna, Austria, 2006.7.24-28).

[C74]     W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu: Transfer and Detection of Single-Electron using Metal-Oxide-Semiconductor Field-Effect-Transistors, 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD) 8B-4 (Sendai, Japan, 2006.7.3-5).

[C75]     Satoru Suzuki, Kenichi Kanzaki, Yukinori Ono, Hiroshi Inokawa, Aravind Vijayaraghavan, Yoshihiro Kobayashi: Mechanism of metal-semiconductor transition in the electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation, Seventh International Conference on the Science and Application of Nanotubes (NT06) G.007 (Nagano, Japan, 2006.6.18-23).

[C76]     K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Long-Retention Gain-Cell DRAM Using Undoped SOI MOSFET, 2006 IEEE Silicon Nanoelectronics Workshop (SNW-06) pp. 101-102 (Honolulu, 2006.6.11-12).

[C77]     K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Room-Temperature Operation of Data Processing Circuit Based on Single-Electron Transfer and Detection with Metal-Oxide-Semiconductor Field-Effect-Transistor Technology, 2006 IEEE Silicon Nanoelectronics Workshop (SNW-06) pp. 23-24 (Honolulu, 2006.6.11-12).

[C78]     Katsuhiko Degawa, Takafumi Aoki, Tatsuo Higuchi, Hiroshi Inokawa, Katsuhiko Nishiguchi, Yasuo Takahashi: A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors, 36th International Symposium on Multiple-Valued Logic (ISMVL'06) pp. 19-24 (Singapore, 2006.5.17-20).