 2009 |
2009.12.19
 |
M. Tabe
SSSJ Chubu Section Lecture, Nagoya |
2009.12.11
|
M. Tabe
IEICE Hokkaido Section and IEEE Sappro Section Lecture,
Sapporo |
2009.11.11-12
|
M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki
and T. Mizuno
"Breakthrough of Advanced Nano-Silicon Devices"
2nd Int. Conf. on Advanced Material and Practice of Nanotechnology (ICAMPN),
Jakarta, Indonesia |
2009.10.30
 |
Sakito Miki, Field: Electrical and Electronics Engineering, M1
The 6th KJS Workshop The Best Presentation Award
S. Miki, D. Moraru, R. Nakamura, M. Ligowski, T. Mizuno, M. Tabe
"Si Single Electron Devices Using Individual Dopants"
The 6th Korean-Japanese Student Workshop,
Hamamatsu, (2009.10.29-30) |
2009.10.29-30
|
M.Tabe
"Single Dopant Electronics"
The 6th Korean-Japanese Student Workshop (KJS Workshop),
Hamamatsu |
2009. 9.1-3
|
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski and T.
Mizuno
"Si Multi-dot FET Using Discrete Dopants"
5th Handai Nanoscience and Nanotechnology Int. Symp.,
Osaka |
2009. 5.17-22
|
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski and T. Mizuno
"Observation of discrete dopant potential and its application to Si
single-electron devices"
6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6),
Los Angeles, USA |
2009. 1.10
|
M. Tabe
Shizuoka Univ. Graduate School of Science and Technology, Symp.,
Hamamatsu |
2009. 1. 8-9
|
M. Tabe
JSPS 167-Committees, Kyoto |
| 2008 |
2008.12.19
|
M. Tabe
The 2008 IEICE Tohoku Section Technical lecture,
Akita |
2008.12. 9-13
|
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski and T. Mizuno
"Application and Observation of Discrete Dopant Potential for Si Single-Electron
Devices"
IUMRS Int. Conf. in Asia 2008 (IUMRS-ICA 2008), Nagoya |
2008.12. 1- 5
|
M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski and T. Mizuno
"Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants
and Photons"
MRS fall meeting 2008, Boston, USA |
2008 10. 2
 |
Reported in Nikkei Sangyo Shinbun |
2008. 7
|
Michiharu Tabe
The Japan Society of Applied Physics (JSAP) Fellow Award |
2008. 5.16
|
M. Tabe
"Si single-electron devices: manipulation of individual dopants"
The 5th Int. Workshop on Nanoscale Semiconductor Devices (IWNSD),
Seoul, Korea |
2008. 4
 |
Grant-in-Aid for Scientific Research(A)
「Si single-electron transfer devices using potential fluctuation by a few
dopants」
(Michiharu Tabe, 4 years) |
| 2007 |
2007.12. 5
|
Michiharu Tabe
Innovative Lectures Award (INNOLEC),
Masaryk University (Brno, CzechRepublic)
"Silicon nanoelectronics: Toward manipulation of a few electrons,
photons and ions |
2007.11.12-14
|
M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, H. Ikeda
"Si Single-Electron Devices: Interaction with Individual Dopants and
Photons"
Fifth Int. Symp. on Control of Semiconductor Interfaces (ISCSI-V),
Tokyo |
2007.11. 8- 9
|
M. Tabe, R. Nuryadi, T. Ishino, Y. Kasai, D. Nagata, K. Ebisawa and H.
Ikeda
"Si Bicrystal Structures for Multijunction Single-Electron Devices"
3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics (SiGe (C)
2007),
Sendai |
2007. 9.19-21
|
M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi and H. Ikeda
"Manipulation of single-electrons in Si nanodevices -Interplay with photons and ions-"
Mechatronics 2007,
Warsaw, Poland |
2007. 8.26-29
|
M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi and H. Ikeda
"Si multidot FETs for single-electron transfer and single-photon detection"
13th Int. Symp. on Ultrafast Phenomena in Semiconductors (13-UFPS),
Vilnius, Lithuania |
2007. 6.25-27
|
M. Tabe, R. Nuryadi and Z. Burhanudin
"Si single-electron FETs for single-photon detection"
2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices (AWAD2007),
Gyeongju, Korea |
2007. 3.27
|
Daniel Ioan Moraru (Romania), Field : Nanovision Science ＆ Technology,
D3
21st JSAP Award for the Most Promising Young Scientist
D. Moraru., Y. Ono, H.Inokawa, K. Yokoi, R. Nuryadi, H.Ikeda, M. Tabe
"Single-electron transfer through multiple tunnel junctions in phosphorous-doped
Si nanowires" |
2007. 1.29
|
M. Tabe
"Si Single-Electron Devices and Photon Detction"
JSPS 151-Committees,
Atami |
2007. 1. 6
|
M. Tabe
"Si Single-Electron Devices -Single-Electron Manipulation and Photonic
Application in Random Dots System-"
20th Ueda-Memorial-Lecture and 40th Anniversary of JSAP Tokai-Branch,
Nagoya |
| 2006 |
2006.12. 9
|
Michiharu Tabe
20th Takayanagi Memorial Award
"Development of Si Single-Electron Devices and Basic Research on Photon Detection" |
2006. 9.22
|
M. Tabe
"Si Multi-Dots Single-Electron Devices and Application to Photon Detection"
IEEJ Physical Sensors Technical Committees,
Toyohashi |
2006. 9.13
|
Daniel Ioan Moraru (Romania), Field:Nanovision Science & Technology, D2
 SSDM Young Researcher Award (2006)
D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda and M. Tabe
"Fowler-Nordheim current oscillations in Si (111)/SiO2/twisted-Si (111) tunneling structures" |
2006. 9. 4- 5
|
R. Nuryadi, M. Tabe
"Nanoelectronic Devices: Silicon Single Electron Device"
1st Int. Conf. on Advanced Material and Practical Nanotechnology,
Tangerang, Indonesia |
2006. 7.10
|
M. Tabe, R. Nuryadi, H. Ikeda
"Development of Si Single-Electron Devices"
JSPS 151-Committees,
Sendai |
2006. 7
|
Grant-in-Aid for Scientific Research on Priority Areas
"Nanoscale-multiple-junctions: Transport control and development of
new functions"
（Michiharu Tabe, 4 years） |
2006. 5.24
|
Zainal Arif Burhanudin (Malaysia), Field:Nanovision Science&Technology,
D2
Horii award for excellence in reseach, Shizuoka University
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe and Y. Ono
"Thermally induced formation of Si wire array on an ultrathin (111)
silicon-on-insulator substrate",
Appl. Phys. Lett. 87 (12), pp.121905-1-3 (2005)
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa and M. Tabe
"Transition from wire formation to island formation in thermal agglomeration of
a (111) silicon-on-insulator layer",
Thin Solid Films, vol.508, pp.235-238 (2006) |
| 2005 |
2005.12.12-17
|
M. Tabe, R. Nuryadi, Y. Ishikawa and H. Ikeda
"SOI-based Silicon Nanodevices"
2005 13th Int. Workshop on The Physics of Semiconductor Devices (IWPSD),
New Delhi, India |
2005.12. 7- 8
|
H. Ikeda and M. Tabe
"Fabrication and Characteristics of Si Nanostructure Devices"
2005 Asian Physics Symp.,
Bandung, Indonesia |
2005.10.26-28
|
Y. Ishikawa and M. Tabe
"Artificial dislocation network for Si Nanodevices"
2005 Int. Microprocesses and Nanotechnology Conf. (MNC2005),
Tokyo |
2005.10.22
|
"Can computors work with photons? Photons are detected by nano-Si
!"
Reported in Asahi Shinbun |
2005.10. 4- 6
|
Y. Ishikawa and M. Tabe
"Artificial dislocation network in SOI nanodevices and its transport
characteristics"
2nd Int. Symp. on Point Defect and Nonstoichiometry (ISPN2),
Kaohsiung, Taiwan |
| 2004 |
2004.10
|
M. Tabe, R. Nuryadi, H. Ikeda and Y. Ishikawa
"Si Multidot Single-Charge Tunneling Devices"
2004 Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT'2004),
Beijing, China |
2004. 9. 6- 9
|
M. Tabe, Y. Ishikawa, R. Nuryadi and H. Ikeda
"Si Single-Electron and Single-Hole Tunneling Devices"
Inter-Academia 2004,
Budapest, Hungary |
2004. 6.23-25
|
Y. Ishikawa, H. Ikeda and M. Tabe
"Si/SiO2 Resonant Tunneling Diodes Based on Silicon-on-Insulator Structure"
6th European Workshop on Low Temperature Electronics (WOLTE-6),
Netherlands |
2004. 4
|
Grant-in-Aid for Exploratory Research
"Detection of Single-Ions by Si Single-Electron Devices"
（Michiharu Tabe, 3 years） |
2004. 4
|
Grant-in-Aid for Scientific Research(S)
"Spatial and Time Control of Single-Electron Transport in Si Devices
and Development of New Functions"
（Michiharu Tabe, 5 years） |
2004. 4
|
Grant-in-Aid for Scientific Research(B)
"Formation of Si Single-Electron Transistors having 1D Tunneling-Junctions
and Control of Electron Transport"
（Yasuhiko Ishikawa, 3 years） |
2004. 3.28
|
Ratno Nuryadi
15th JSAP Award for the Most Promising Young Scientist |
| 2003 |
2003.11.15
|
Yasuhiko Ishikawa
Takayanagi Young Researchers Award |
2003. 8.21-24
|
M. Tabe, R. Nuryadi, H. Ikeda and Y. Ishikawa
"Single-Electron and Single-Hole Tunneling in Si Coupled-Dot FETs
Fabricated from Ultrathin SOI"
2003 Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments (ASPE 2003),
Gangneung, Korea |
2003. 4
|
Grant-in-Aid for Scientific Research(B)
"Control of Single-Electron-Tunneling in Si Coupled Dots for Nano-Dots Automata"
（Hiroya Ikeda, 3 years） |
| 2002 |
| 2002.11.30 |
Nanodevices Lab.- OB meeting |
2002. 6
|
M. Tabe and Y. Ishikawa
"Si/SiO2 Resonant Tunneling Diodes Based on Ultrathin SOI Structure"
IEEE 2002 Silicon Nanoelectronics Workshop,
Honolulu |
2002. 3. 4
|
"Resonant Tunneling Effects in Si"
Reported in Nikkan Kogyo Shinbun |
| 2001 |
2001.10
|
M. Tabe, K. Sawada, Y. Ishikawa and M. Ishida
"Electron Field Emission from Silicon Nano-Protrusions"
The 6th Int. Conf. on Solid State and IC Technology (ICSICT'01),
Shanghai, China |
2001. 8
|
M. Tabe and Y. Ishikawa
"SOI-based Si nanostructures and their applications"
Science and Technology of SILICON MATERIALS, Frontier Science Research Conf.,
California |
2001. 4
|
Grant-in-Aid for Scientific Research(C)
"Selective Growth of Si Islands by Thermal Agglomeration of SOI Layers and Application to Photonic Devices"
（Yasuhiko Ishikawa, 3 years） |
| 2000 |
2000. 4
|
Grant-in-Aid for Scientific Research(B)
"Development of Thermally-Stable Ultrathin SOI Layers"
（Michiharu Tabe, 3 years） |
2000. 4
|
Grant-in-Aid for Scientific Research(B)
"Fabrication of 2D Coupled Si Dots and Research on Its Electron Transport"
（Michiharu Tabe, 3 years） |
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