Fig. 1.I_d-V_gs characteristics of asymmetric SETs calculated by the model (lines) and the reference simulator (symbols) for R_d / R_s of 1 M/ 19 M (open diamonds) and 19 M/ 1 M (open circles). Other parameters are C_d = C_s = C_g = 1 aF, C_b=0, V_ds = 26.7 mV (), and T = 18.6 K ().

Fig. 2.Coulomb staircase (I_d-V_ds characteristics) of an asymmetric SET calculated by the model (lines) and the reference simulator (symbols) for V_gs=0 (open diamonds) and V_gs=e/2C_g (80.1 mV) (open circles). Other parameters are R_d = 1 M, R_s = 19 M, C_d = 0.1 aF, C_s = 1.9 aF, C_g = 1 aF, C_b = 0, and T=18.6 K (). Sweep paths (dashed lines pointed by open arrows) in the V_d-V_gs space with Coulomb blockade (CB) regions and single-electron tunneling (SET) regions are shown in the inset. Note that both capacitance and resistance of the source/drain tunnel junction are made asymmetric to attain Coulomb staircase characteristics. In other examples of asymmetric SET characteristics, only the resistance is made asymmetric.

Fig. 3.I_d-V_gs characteristics of asymmetric SETs calculated according to the model (lines) and the reference simulator (symbols) for various drain voltages. Values in square brackets are normalized drain voltages . Other parameters are R_d = 1 M, R_s = 19 M, C_d = C_s = C_g = 1 aF, C_b=0, and T = 18.6 K ().

Fig. 4.I_d-V_gs characteristics of asymmetric SETs calculated by the model (lines) and the reference simulator (symbols) for various temperatures. Values in square brackets are normalized temperature . Other parameters are R_d = 1 M, R_s = 19 M, C_d = C_s = C_g = 1 aF, C_b=0, and V_ds = 26.7 mV ().

Fig. 5. Averaged charge in the Coulomb island Q_isl as a function of gate voltage V_gs calculated by the model (lines) and the reference simulator (symbols) for R_d / R_s of 1 M/ 19 M (open diamonds), 19 M/ 1 M (open circles), and 10 M/ 10 M (open squares). Other parameters are the same as those for Fig. 1 [C_d = C_s = C_g = 1 aF, C_b=0, V_ds = 26.7 mV (), and T = 18.6 K ()].